[Jiuan]

I am running a case including a gas phase reation and surface reaciton, which are:
SiH4(g) -> SiH2(g)+H2(g) and SiH2(g) ->Si(s)+H2(g). The geometry and boundary condition are rather simple. I input there parameters related to chemical kinetics into Fluent, which are Pre-exponential factor (A), activation energy (Ea), and temperature exponent (Beta). When I change the A or Ea for surface reaciton, the deposition rate of Si does not change, which is very strange. I run more cases to test it, and found out that even if I reduce the value of A by 1000 times, and keep Ea fixed, the deposition rate of Si is the same. I am totally confused by Fluent. . Does anybody have the problem before? Or if you guys have interest, you can have a try. Thanks in advance.

Jiuan